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SK Hynix breaks ground on $4 billion HBM memory facility in Indiana for AI
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The Korean chipmaker adds storage to its American plans as a memory shortage tied to AI demand shows no sign of easing.
Key facts
- On August 27, 2026, the company broke ground on an advanced memory packaging facility in West Lafayette, Indiana
- The Indiana project is receiving up to $458 million in support from the CHIPS Act
- SK Hynix CEO Kwak Noh-Jung has said the current memory chip shortage may persist until the end of 2030
- A cleanroom is slated for completion by October 2028, with volume production of next-generation HBM4E chips forecast for the second half of 2029
Summary
SK Hynix plans to build a NAND memory facility in the US, aimed squarely at the AI data centers consuming chips faster than anyone can make them. The move would give the South Korean memory giant a second major manufacturing footprint on American soil. HBM feeds data to AI processors at high speed, while NAND stores the massive datasets those processors chew through. That NAND effort runs through Solidigm, SK Hynix’s US subsidiary.