South Korea · The Register
Researchers work out how to control 2D semiconductor growth for future chips
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Korean boffins use oxygen to stop crystals forming in the wrong places, aiming to get tech to commercial sector by 2030.
Key facts
- In a separate test across a two-centimeter substrate, the process produced single crystals at 397 of 400 patterned sites, a yield of 99.3 percent
- The paper, " Spatially deterministic nucleation of 2D semiconductors by etching flux," was authored by a team including researchers at KAIST and South Korean startup TDS Innovation and published
- The paper doesn't say when they can expect to see 2D semiconductors made this way in production chips, TDS's Jony Jung told them: "The team are aiming to enable commercial use of 2D semiconductors around 2030
- Paper co-author Kibum Kang is co-CEO of TDS Innovation, which develops equipment and materials for 2D semiconductor devices
Summary
Researchers have demonstrated a way to control where 2D semiconductor crystals begin growing, potentially addressing an obstacle to manufacturing next-generation chips at scale, according to a study published in Nature. The paper, " Spatially deterministic nucleation of 2D semiconductors by etching flux," was authored by a team including researchers at KAIST and South Korean startup TDS Innovation and published on October 7. The technique uses an etching flux to suppress the formation of new crystals everywhere within each patterned growth region except at its geometric center. Monolayers of some transition-metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS₂), do have a band gap and are being investigated as materials for future transistors and other nanoscale devices.