Samsung · South Korea · en.sedaily.com
Samsung is on track to more than double output of its HBM4 and HBM4E DRAM
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Samsung Electronics (005930) is expected to more than double output of its HBM4 family of high-bandwidth memory chips next year, including sixth-generation HBM4 and seventh-generation HBM4E, as the company plans to raise demand for glass carriers by 2.5 times from this year.
Key facts
- In February, Samsung began mass-production shipments of HBM4 using 10-nanometer-class sixth-generation (1c) DRAM and a base die built on a 4-nanometer process
- The industry expects Samsung's HBM production scale to grow nearly 40% to about 250,000 wafers next year from roughly 180,000 wafers this year, measured by average monthly wafer input
- Samsung Electronics (005930) is expected to more than double output of its HBM4 family of high-bandwidth memory chips next year, including sixth-generation HBM4 and seventh-generation HBM4E
- Samsung will increase outsourced cleaning volume for glass carriers, an essential material in HBM production, to 50,000 sheets a month next year from 20,000 sheets a month this year, according
Summary
Samsung will increase outsourced cleaning volume for glass carriers, an essential material in HBM production, to 50,000 sheets a month next year from 20,000 sheets a month this year, according to semiconductor industry sources on the 20th. A glass carrier is a support temporarily attached to the underside of an HBM DRAM wafer to prevent bending or cracking while the wafer is ground thin and drilled. The HBM4 and HBM4E products Samsung is preparing to scale up center on 12-layer and higher stacks. In February, Samsung began mass-production shipments of HBM4 using 10-nanometer-class sixth-generation (1c) DRAM and a base die built on a 4-nanometer process.